Fig. 4: Structure and photoelectric response characteristics of UV detector.
From: Printing ultrathin Quasi-2D Ga2O3 for fast yet highly responsive vertical photodetectors
a The schematic illustration of the ITO/2D Ga2O3 photodetectors. b The detector’s I–V curves acquired in the dark environment under a 254 nm illumination intensity. c Responsivity of the photodetector under light illumination of wavelengths ranging from 200 to 800 nm. d Photocurrent of the device versus the light intensity under 254 nm illumination at 10 V. e The device’s responsivity versus the light intensity under 254 nm illumination at 10 V. f The detector’s detectivity for several irradiances at 254 nm. g Transient photoresponse of device. Energy band diagrams at the interface of ITO/Ga2O3 under (h) dark and (i) UV illumination. ECBM and EVBM represent the conduction band edge and valence band edge, respectively.
