Fig. 1: Development history and future direction of semiconductor device technology: material, device and integration. | npj 2D Materials and Applications

Fig. 1: Development history and future direction of semiconductor device technology: material, device and integration.

From: Enabling the Angstrom Era: 2D material-based multi-bridge-channel complementary field effect transistors

Fig. 1

This figure outlines the progression of semiconductor technology, categorized into three main areas: materials, devices, and integration strategies. The Angstrom era highlights advancements in channel materials (2D materials), interconnects (topological semimetals), and gate stacks (ferroelectric materials) as devices approach sub-1 nm nodes. On the device side, innovations such as 2DM-MBC and CFET logic, along with vertical channel structures for DRAM and NAND, exemplify the move towards 3D architectures. Integration methodologies like DTCO and STCO, including advanced packaging and back-side power delivery, are essential to realizing compact, high-performance 3D architectures5,17,76,77,78,79,80,81,82,83,84,85,86,87,88,89,90,91,92,93,94,95,96,97,98.

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