Fig. 4: Different possible exciton-spin-valley configurations in a 2D lateral heterostructure platform. | npj 2D Materials and Applications

Fig. 4: Different possible exciton-spin-valley configurations in a 2D lateral heterostructure platform.

From: Seamless in two dimensions: prospects of lateral heterostructures from integration to quantum devices

Fig. 4

a Directional exciton transport across 1D interface due to asymmetric energy landscape from higher to lower excitonic-resonance domain (WX2 to MoX2)54. b optically (off-resonant circularly polarized excitation) or electrically controlled valley filter or valley transistor due to valley contrasting features across MoX2-WX2 LHS55. c Gate defined quantum confinement of excitonic wave function due to a laterally engineered electric field defined confining potential, reproduced from ref. 95,96 with permission from Springer Nature and Science publishing group. d Variation of exciton density distribution across a 1D interface showing exciton lensing or collimation effect. e Electrically controlled valley qubit via gate-defined momentum profile to tunable quantum states.

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