Table 2 Exciton-diffusion length in different material configurations

CdSe/CdS core/shell QD film¹⁶¹

0.019–0.024

2 × 10⁻⁴

GaAs wire (15 K)¹⁶²

4

-

AlAs/GaAs quantum well (200 K)¹⁶³

5

3 × 10⁵

WS₂^164,165

0.2–0.36 (bright exciton), 2.4 μm (dark exciton)

0.3, 40–240

WSe₂¹⁶⁶

0.36 (bright exciton), 1.5 (dark exciton)

14.5

MoSe₂¹⁶⁷

0.6

12

MoS₂¹⁶⁸

1.5

2.1

Twisted MoSe₂ (4 K) (10⁰<Ɵ<40⁰)¹⁶⁹

4

MoS₂-WS₂ LHS^101,170

~2, 40 (cavity embedded)

2D perovskite^171,172

0.03–0.67

0.06–0.35

(BA)₂PbI₄–(BA_0.8PA_0.2)₂PbI₄ (80 K)¹⁷³

1.2

Doped Silicon(30 K)¹⁷⁴

40

35