Abstract
Atomically thin hexagonal boron nitride (hBN) interlayers control interactions between electronic states of interfacing materials by modulating their separation at the atomic scale. These interlayers regulate interactions, whose strengths vary with distance. Here, we review how hBN is employed to enhance electronic and optoelectronic performance by mitigating disadvantageous interactions while preserving advantageous ones. Recent advances in hBN growth and integration are highlighted, and challenges that hinder widespread application are discussed.
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Acknowledgements
This work was supported by the National R&D Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2023R1A2C2005427, RS-2023-00234622), and by the Institute for Basic Science (IBS-R034-D1).
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J.-H. J. and C.-J. K. conceived the outline of the review and wrote the manuscript. All authors have read and approved the final manuscript.
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Jung, JH., Kim, CJ. Hexagonal boron nitride: interlayer with atomic scale precision for interface engineering in functional materials and devices. npj 2D Mater Appl (2026). https://doi.org/10.1038/s41699-026-00664-7
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DOI: https://doi.org/10.1038/s41699-026-00664-7
