Extended Data Fig. 4: Gate-dependent ferromagnetism in device #2.
From: Controlling the magnetic anisotropy in Cr2Ge2Te6 by electrostatic gating
2D colour maps of \(\Delta {\mathrm{MR}} = \left| {{\mathrm{MR}}^ \uparrow \left( H \right) - {\mathrm{MR}}^ \downarrow \left( H \right)} \right|\) as a function of temperature and out-of-plane magnetic field for the device #2 at (a) VG = 2.7 V, (b) 2.8 V and (c) 3.7 V.
