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TWO-DIMENSIONAL MATERIALS

Native high-k oxides for 2D transistors

Nature Electronics volume 3, pages 442–443 (2020)Cite this article

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The two-dimensional semiconductor Bi2O2Se can be oxidized to create an atomically thin layer of Bi2SeO5 that can be used as the insulator in scaled field-effect transistors.

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Fig. 1: Development of FETs with Bi2O2Se channels and native Bi2SeO5 insulators.

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Authors and Affiliations

  1. Institute for Microelectronics, TU Wien, Vienna, Austria

    Yury Yu. Illarionov, Theresia Knobloch & Tibor Grasser

  2. Ioffe Physical-Technical Institute, St Petersburg, Russia

    Yury Yu. Illarionov

Authors
  1. Yury Yu. Illarionov
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  2. Theresia Knobloch
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  3. Tibor Grasser
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Correspondence to Yury Yu. Illarionov or Tibor Grasser.

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Illarionov, Y.Y., Knobloch, T. & Grasser, T. Native high-k oxides for 2D transistors. Nat Electron 3, 442–443 (2020). https://doi.org/10.1038/s41928-020-0464-2

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