Extended Data Fig. 1: Electron transport in multi-channel nanowires.
From: Multi-channel nanowire devices for efficient power conversion
a, Electron mobility in multi-channel nanowires measured by gated hall bar at different gate voltages (VG) and nanowire width (wNW). The mobility peak depends on the nanowire width and shifts to higher VG as wNW decreases. b, Peak mobility as a function of wNW, extracted from figure (a). 20 nm-wide nanowires still present a high mobility value of 1200 cm2/Vs. This is of great importance as it demonstrates excellent electron conduction despite the small nanowire dimensions and the sidewalls scattering contributions. The excellent mobility results in a very low sheet resistance Rs of 150 Ω/sq for 20 nm e-mode nanowires c. Such value is half of the typical sheet resistance of conventional planar single-channel heterostructures. d, TEM cross-section showing the interface between the multi-channel nanowire and the ALD SiO2 gate oxide. A smooth surface with no evident roughness above ~ 1 nm can be observed.
