Fig. 3: Optoelectronic properties of MAPbI3 wafers.
From: High-sensitivity high-resolution X-ray imaging with soft-sintered metal halide perovskites
a, Current density measurement under dark condition for an MAPbI3 wafer. The applied voltage ranges from −200 to +200 V, which corresponds to an electrical field of ±0.2 V µm−1. b, Calculated sensitivity (S) of the X-ray responses in the RQA5 spectrum and a dose of 213 µGyair s−1. c, EHP creation energy for the measurement series of 52 and 4 µGyair s−1. The limit is 4.5 eV according to the Klein rule40. In the double logarithmic representation (inset), the hyperbolic behaviour of W± is visible. d, EHP creation energy versus exposed X-ray spectrum. The MAPbI3 wafer was exposed with a dose of 40 µGyair in the RQA5 spectrum and an applied electrical field of 0.043 V µm−1. The X-ray tube voltage was varied from 50 to 120 kVp (black points) and back to 50 kVp thereafter (red dots).
