Extended Data Fig. 1: Summary table and resistance distribution of foundry provided 22 nm 1T1R ReRAM cell. | Nature Electronics

Extended Data Fig. 1: Summary table and resistance distribution of foundry provided 22 nm 1T1R ReRAM cell.

From: A four-megabit compute-in-memory macro with eight-bit precision based on CMOS and resistive random-access memory for AI edge devices

Extended Data Fig. 1: Summary table and resistance distribution of foundry provided 22 nm 1T1R ReRAM cell.The alternative text for this image may have been generated using AI.

a, The cell size of the production-ready 22 nm 1T1R SLC ReRAM cell was 53F2 26. 27 The set and reset voltages ranged from 1.62~3.63 V, and endurance was estimated at >10 K set/reset 28 cycles. b, Measured cell resistance distribution of 22 nm ReRAM cell. The proposed on-chip 29 program and verify circuit reduced cell-resistance variation by 0.6x in LRS and 0.63x in HRS cells, 30 resulting in an average resistance ratio (HRS/LRS; R-ratio) of 4.51.

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