Fig. 1: Device structure and characteristics of inorganic CsSnI3-based perovskite TFTs.
From: High-performance inorganic metal halide perovskite transistors
a, Schematic of the bottom-gate/top-contact TFT structure used in this study. b,c, μFE and Ion/Ioff of TFTs based on channels fabricated from CsSnI3 precursors with different CsI/SnI2 molar ratios (b) and CsI-rich (x = 1.25) precursors with different Pb substitution ratios (c). The error bars were calculated from 12 individual devices. d,e, Transfer (d) and output (e) characteristics of the optimized TFTs (x = 1.25, 10 mol% Pb substitution and SnF2 = 7 mol%). Ig in d indicates the gate leakage current. f, Transfer characteristics of 100 individual perovskite TFTs fabricated from ten different batches based on the channels processed from the optimal precursor (VDS = −40 V). The inset shows the μFE statistics of the 100 devices.
