Fig. 2: Characterizations of perovskite films processed from different precursors.
From: High-performance inorganic metal halide perovskite transistors
a–c, Ultraviolet–visible absorption spectra (a), XRD patterns (b) and SEM images (c) of perovskite films deposited from precursors with different ratios of CsI:SnI2 (x) and that from CsI-rich (x = 1.25) precursor with 10 mol% Pb substitution (7 mol% SnF2). d,e, Hall-measurement-derived hole concentration (d) and Hall mobility (e) of thin films processed from precursors with different ratios of CsI:SnI2 (without SnF2) and that from the optimal CsI-rich (x = 1.25) precursor with 10 mol% Pb substitution (7 mol% SnF2). The error bars were calculated from six individual measurements.
