Extended Data Fig. 4: Variability of GFETs based on Type 1 and Type 2 Graphene.
From: Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
Here, the full statistics from Fig. 3(e) in the main manuscript are compared to the characteristics of 5 selected devices for each graphene type, selected for the hysteresis and long term stability studies. In (a) the average Dirac point location of the 5 selected devices is compared. Fig. (b) shows the variability of the 5 selected devices of Type 1 in comparison to all 50 devices of Type 1 and Fig. (c) shows the equivalent comparison for Type 2 devices. In Fig. (d), the full transfer characteristics of 30 Type 1 GFETs are compared to the transfer characteristics of the 5 selected Type 1 GFETs and in Fig. (e) the comparison for Type 2 GFETs is shown.
