Extended Data Fig. 7: Hysteresis in the transfer characteristics of double gated GFETs.
From: Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
In (a) the ID(VG) curves for top gate sweeps within ± 5 V are shown for VBG varying between 6V in the first measurement and -20V in the last measurement on GFET D2 in round (1). In (b) the hysteresis width for this measurement round (D2(1)) for varying sweep times is shown and in (c) the work function shift as a function of the applied back gate voltage is compared for all the sweep frequencies. In Fig. (d), the measurement round (2) on D1 with VTG ∈ ± 5V and VBG ∈ [-20V, 20V] is shown at the slowest sweep time and the hysteresis width for varying tSW is shown in (e). Figs. (f) and (g) show similar graphs for the measurement round (1) on D1 with VTG ∈ ± 5V and VBG ∈ [-20V, 5V]. Fig. (h) shows the absolute hysteresis width for different measurement rounds as a function of VBG and Fig. (i) shows the dependence of VDirac on VBG which is used to calculate EW.
