Fig. 5: Hysteresis in the transfer characteristics of GFETs.
From: Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
a, Hysteresis in the transfer characteristic measured on five different Type 1 GFETs, illustrating the variability of the devices. b, Hysteresis width as a function of 1/tSW is shown for five different devices for each graphene type. The circles and triangles are used to represent Type 1 and Type 2 GFETs, respectively, whereas the solid and dashed lines are guides to the eye for Type 1 and Type 2 GFETs, respectively. c, Hysteresis width for Type 1 and Type 2 GFETs is shown as measured on one representative GFET per type. d, Dirac-point shifts of the up and down sweeps are shown with empty/full symbols for VDirac,down/VDirac,up, respectively. e,f, For double-gated GFETs, the ID–VG curves at slow sweeps are compared for two different VBG values (e) with the respective hysteresis widths as a function of the inverse sweep time (f). g, Extent of doping the GFET as a function of the back gate voltage, for various sweep times, based on VDirac and equations (1) and (2). h, Relative change in the hysteresis width for the slowest sweeps is shown for different measurement rounds on two GFETs (D1 and D2) at varying VBG values, illustrating that the hysteresis width increases for higher VBG. i, Respective effective electrostatic doping for the measurement rounds on D1 and D2.
