Extended Data Fig. 1: Band alignment of various 2D semiconductors with amorphous oxides.
From: Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
Band diagram showing the band alignment of several monolayer 2D semiconductors to the three most common gate oxides and their respective defect bands. In (a) the band edge alignment of the 2D semiconductors is shown together with the defect bands in three oxides to give an overview over possible combinations. Based on (a) potentially stable combinations of 2D semiconductors with HfO2 are shown in (b), revealing BP as a promising candidate. In (c) the selection for Al2O3 is presented, where HfSe2 or ZrSe2 could maximize the distances of conduction and valence band edges to the defect band.
