Extended Data Fig. 8: Evaluation of threshold voltage, resistance and the incubation time of a VO2 switch.
From: Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing
a, IMT threshold voltage and resistance of a 1-µm-long channel VO2 switch measured at different relaxation times. Both parameters show similar trends, although the change in the threshold voltage is ten times larger than that of the resistance. Both parameters stabilize at in a few seconds and do not show logarithmic relaxation. We note that the MIT threshold voltage was totally independent from the relaxation time. b, Measured incubation revealed the information of previous switching events when the threshold and resistance are constant. Each data point corresponds to at least 20 measurements (error bars defined) with the exception of the T = 1000 s where we collected three data points. The results show that the memory effect embedded in the incubation time is independent from the changes in the threshold voltage and the resistance of the channel.
