Extended Data Fig. 7: Operation and reliability of all-inorganic protonic ECRAMs under elevated temperature.
From: CMOS-compatible electrochemical synaptic transistor arrays for deep learning accelerators
a, Programing of an all-inorganic protonic ECRAM with Al2O3 passivation measured at the same temperature after being annealed at 100 °C (black square), 150 °C (red circle), and 200 °C (blue triangle), respectively. b, Programing an all-inorganic protonic ECRAM at 80 °C (black) and 100 °C (red). G0 and ∆G increased due to the thermal excitation of additional carriers in the HxWO3 channel and the increase of proton diffusivity, respectively. c, Logarithmic scale plot showing the average ∆G per weight-update step as a function of the device operating temperature. Red dotted line represents the linear fitting to the data. d, Retention of the fully on-state conductance of the ECRAM cell at 80 °C (black) and 100 °C (red), and the corresponding drift coefficient (v), measured with the gate floating. e, ECRAM endurance test at 80 °C for 107 write-read pulses, showing no device degradation with the intermediate switching cycles plotted after 104, 105, 106, and 107 pulses.
