Extended Data Fig. 2: All-inorganic protonic ECRAM with elemental metal gate.
From: CMOS-compatible electrochemical synaptic transistor arrays for deep learning accelerators
a, Schematic of the protonic ECRAM employing only Cr/Au as the gate electrode. b, Symmetric programing of the device channel conductance under gate-current pulses (100 potentiation then 100 depression pulses with the gate-current pulse amplitude of 100 pA and width of 3 s). c, Asymmetric programing of the same device but under gate-voltage pulses (50 potentiation then 50 depression pulses with the gate-voltage pulse amplitude of ±4 V and width of 3 s), caused by the non-zero built-in open-circuit potential.
