Extended Data Fig. 3: Read noise and cycle-to-cycle variability of ECRAM operated with 10 µsec programming gate-voltage pulses.
From: CMOS-compatible electrochemical synaptic transistor arrays for deep learning accelerators
a, Zoom-in view of the programing characteristics showing the readout of four discrete conductance states with low read noise during the 10 microseconds sensing period shaded in green, after 10 microseconds settling time, out of the 300 conductance states shown in Fig. 2b. Red dotted lines serve as visual guide to mark the average channel conductance in each state. b, Zoom-in view of the read-out conductance (black circle) after the corresponding weight-update pulses. The red solid line is the expected conductance value obtained through fitting the depression curve. The small deviation of the experimental data to the expectation indicates small cycle-to-cycle variation. Blue dotted lines serve as visual guide to mark the measured conductance values on y axis.
