Extended Data Fig. 4: ECRAM pulse-measurement setups to extract the read transients.
From: CMOS-compatible electrochemical synaptic transistor arrays for deep learning accelerators
a, Measurement configuration to extract tread. WGFMUs are connected to the ECRAM source and drain terminals. The gate is grounded. During measurement, the voltage pulse is applied on the drain side and the other channel of WGFMU reads the current signal. b, Measurement configuration to perform the microsecond pulse write operations and extract tread-after-write. WGFMUs are connected to the ECRAM gate and drain terminals. The source is grounded. During measurement, the voltage pulse is applied on the gate terminal for the weight-update and the other channel of WGFMU applies a small voltage pulse to reads the current flowing across the channel afterwards. SMU: source-measurement unit (Keysight B1517A). WGFMU: waveform generator/fast-measurement unit (Keysight B1530A). GND: ground. Red and blue dashed lines mark the WGFMU and SMU channels, respectively.
