Extended Data Fig. 5: Platinum contact resistance to HxWO3.
From: CMOS-compatible electrochemical synaptic transistor arrays for deep learning accelerators
a, SEM micrograph showing the transmission-line structure fabricated with Lch varied from 6 µm down to 150 nm but identical W of 60 µm. Scale bar, 50 µm. b, Width normalized overall resistance R as a function of Lch for HxWO3 switched between high (180 MΩ·sq-1) and low (150 kΩ·sq-1) sheet resistance corresponding to the operating dynamic range of ECRAM, showing a degradation of the device on/off ratio with the scaling of the Lch.
