Extended Data Fig. 6: HxWO3 channel after the endurance test.
From: CMOS-compatible electrochemical synaptic transistor arrays for deep learning accelerators
a, STEM micrograph showing the gate stack of the ECRAM after operation with 100 million read-write cycles. Scale bar, 100 nm. b, The depth profiles showing the atomic fractions of W (black), Hf (blue), and O (red) before (solid lines) and after (dotted lines) the 108 cycle endurance test, as measured by energy dispersive X-ray spectroscopy. The orange dashed line serves as a visual guide to mark the interface between WO3 and HfO2.
