Extended Data Fig. 4: NDC in MOSCAP containing the 1 nm thick ferroelectric HZO.
From: Negative differential capacitance in ultrathin ferroelectric hafnia
a, Pmax, Pres, and P are extracted for each V, and plotted as a function V, where negligible Pres is observed like the measurement with the 1.5-nm-thick HZO, as shown in Fig. 2c. b, Comparison between the P vs. V curves plotted with respect to Vth for MIS (blue) and MFIS (red) structures; the boosted performance in MFIS is clearly observed, which gives rise to the ‘S’-shaped P-E curve in Fig. 2e.
