Extended Data Fig. 5: Curve fitting of C–V curves to obtain equivalent oxide thickness for MOSCAPs fabricated on highly doped p-type Si substrates. | Nature Electronics

Extended Data Fig. 5: Curve fitting of C–V curves to obtain equivalent oxide thickness for MOSCAPs fabricated on highly doped p-type Si substrates.

From: Negative differential capacitance in ultrathin ferroelectric hafnia

Extended Data Fig. 5: Curve fitting of C–V curves to obtain equivalent oxide thickness for MOSCAPs fabricated on highly doped p-type Si substrates.

a. b, c, d, Equivalent oxide thickness (EOT) extracted from fitting the C–V data of the MOSCAPs with 1-, 1.5-, 1.8-, and 2.2-nm-thick HZO films are 0.766, 0.752, 0.698, 0.745 nm, respectively.

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