Extended Data Fig. 1: Consecutive reconfiguration of our MoTe2 devices.
From: Programmable graded doping for reconfigurable molybdenum ditelluride devices
a, Consecutive switches of four functions among n-p diode, n-doped state, p-doped state, and homeostatic function of heterosynaptic plasticity. The coloured background regions represent the electrical characterization process of each function and the grey regions mark the reconfiguration processes. Vd/Vg sets of 44 V/15 V, 10 V/−15 V, and 1 V/25 V are applied for the reconfiguration process of n-p diode, n-doped state, and p-doped state, respectively. Positive Vg pulses of 25 V, 0.1 s and negative Vg pulses of −25 V, 0.15 s are applied for the emulation of homeostatic function of heterosynaptic plasticity. b, Rectification ratio of n-p diode, dynamic range of homeostatic function of heterosynaptic plasticity, and channel currents of n-doped state and p-doped state of memory in repeated function switches.
