Extended Data Fig. 3: TEM analysis of MOCVD-grown MoS2.
From: 200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors
a. Dark-field TEM images of MOCVD-grown MoS2 obtained from varios angles. The image at the top center represents the corresponding diffraction pattern. b. Grain mapping image obtained by SADP (Selected area diffraction pattern) images. The grain size is estimated in range from 50 nm to 100 nm. c. HAADF-STEM (High-angle annular-dark-field scanning tunneling electron microscopy) images showing two grains with a grain boundary. d. Higher magnification and Gaussian-processed view of c. The red spheres represent Mo atoms, while the yellow spheres represent S atoms. It particularly demonstrates a S-deficient environment compared to Mo at the grain boundary.
