Extended Data Fig. 4: XPS analysis of MoS2 samples with varying crystallinity.
From: 200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors

a. XPS spectra of three MoS2 samples with different crystallinity. The top spectrum represents MoS2 single crystal, the middle one corresponds to polycrystalline MoS2 grown with a grain size of 500 nm, and the bottom spectrum is for polycrystalline MoS2 used in this study with a grain size of less than 100 nm. While the MoS2 single crystal exhibits minimal presence of Mo 6+ or 3+ peaks, the other two MoS2 samples show observable peaks for both Mo 6+ and 3+ states. Here, the intensity of the 6+ peak indicates the extent of oxidation to MoO3, while the size of the 3+ peak is directly related to the sulfur vacancy concentration. b. The Mo:S ratio and sulfur vacancy concentration extracted from the XPS spectra for each sample. Here, the Mo:S ratio has been normalized to the crystal sample. It clearly indicates that the polycrystalline sample indeed has a sulfur-deficient environment. Furthermore, the increase in sulfur vacancy concentration as the grain size decreases, coupled with a decrease in the Mo:S ratio, indirectly suggests that sulfur vacancies are generated at grain boundaries.