Extended Data Fig. 5: Field effect mobility (μFE) and 4-point probe mobility (μ4PP) for MoSe2 and WSe2 FETs. | Nature Electronics

Extended Data Fig. 5: Field effect mobility (μFE) and 4-point probe mobility (μ4PP) for MoSe2 and WSe2 FETs.

From: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

Extended Data Fig. 5: Field effect mobility (μFE) and 4-point probe mobility (μ4PP) for MoSe2 and WSe2 FETs.The alternative text for this image may have been generated using AI.

Hole field-effect mobility (\({\mu }_{{FE}}\)), extracted from peak transconductance for a) thick channel and b) thin channel FETs based on V-, Nb-, and Ta-doped MoSe2 and for c) thick channel and d) thin channel FETs based on V-, Nb-, and Ta-doped WSe2. Bar plots showing the 4-point probe mobility (\({\mu }_{4{PP}}\)) extracted from Hall measurement for holes for e) MoSe2 and f) WSe2 specimens with dopants V, Nb, and Ta.

Back to article page