Extended Data Fig. 8: Resistor network for carrier transport in our proposed 2D FET. | Nature Electronics

Extended Data Fig. 8: Resistor network for carrier transport in our proposed 2D FET.

From: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

Extended Data Fig. 8: Resistor network for carrier transport in our proposed 2D FET.The alternative text for this image may have been generated using AI.

(a) A resistor network with essential resistance components associated with carrier transport in our proposed 2D FET structure. Schematic and corresponding band-diagrams for MoSe2 based 2D FETs with thick channels underneath the contacts and (b) multilayer, (c) bilayer and (d) monolayer channels between the contacts. The bandgap mismatch between thick and thin MoSe2 layers give rise to an additional energy barrier at the interface between the thinner channel and thicker contact regions. This energy barrier remains relatively small for channels over 2 layers, as the MoSe2 bandgap stays nearly constant. However, the barrier height can increase markedly when the channel becomes monolayer, due to the transition from indirect to direct bandgap between bi-layer and monolayer. This alteration can lead to a considerable increase in RC. (e) Transfer characteristics of a multilayer Nb-doped MoSe2 FET after each etch cycle, and (f) corresponding bar plot of the \({R}_{C}\) values obtained from TLM measurements.

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