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Solution-processed wafer-scale indium selenide semiconductor thin films with high mobilities

Nature Electronics volume 8, pages 244–253 (2025)Cite this article

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Abstract

Solution-processed two-dimensional semiconductors could be used to create electronic devices on large scales and at low cost. However, the electronic performance of devices based on such materials is typically below that of devices based on materials grown via high-temperature chemical vapour deposition. Here we report the fabrication of indium selenide (InSe) semiconductor thin films using a colloidal solution of monolayer nanosheets (monolayer purity more than 98%). The InSe thin films are assembled on 4-inch wafers with conformal and intimate van der Waals contacts between the monolayer building blocks. We use the solution-processed films to fabricate InSe transistors that exhibit electron mobilities of 90–120 cm2 V−1 s−1, current on/off ratios of up to 107 and a small current hysteresis. We also show that InSe transistors with oxide encapsulation can remain stable in air for 3 months.

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Fig. 1: Understanding the effect of moisture in the electrochemical molecular intercalation and exfoliation of InSe crystal.
Fig. 2: Solution-processable wafer-scale InSe thin film using the monolayer ink.
Fig. 3: Electrical characterizations of the InSe thin films.
Fig. 4: Tuning the electrical performance with ligand exchange process.
Fig. 5: Device stability of the InSe transistors.

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Data availability

The data that support the plots within this paper and other findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

Z.L. acknowledges the financial support from National Natural Science Foundation of China (NSFC, grant no. 22275113), Beijing Natural Science Foundation (grant no. Z240025), Tsinghua University Dushi programme and startup fund. We also acknowledge R. Zong and C. Ma in Analysis Center at Tsinghua University for their support of TEM characterizations. We acknowledge the Cell Biology Facility affiliated with the Center of Biomedical Analysis, Tsinghua University, for technical assistance and equipment support with Hitachi H-7650.

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Authors and Affiliations

  1. Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China

    Jing He, Jifeng Ge, Junying Xue, Tingyi Xia, Yongping Dai, Shengqi Wang, Wenjie Li & Zhaoyang Lin

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Contributions

Z.L. designed and supervised the research. Z.L. and J.H. developed the intercalation and exfoliation approach for InSe crystal and the strategy for film deposition and device fabrication. J.H. performed the experiments on the material synthesis, structure characterizations and device measurements. J.G. and J.X. assisted with the material preparation and structural characterizations. T.X., Y.D., S.W. and W.L. assisted with the crystal growth and material synthesis. Z.L. and J.H. cowrote the paper. All authors discussed the results and commented on the paper.

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Correspondence to Zhaoyang Lin.

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Nature Electronics thanks Yong-Young Noh and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.

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He, J., Ge, J., Xue, J. et al. Solution-processed wafer-scale indium selenide semiconductor thin films with high mobilities. Nat Electron 8, 244–253 (2025). https://doi.org/10.1038/s41928-025-01338-w

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