Quantum-dot light-emitting diodes have been achieved with electroluminescent response speeds faster than expected for their organic–inorganic hybrid structure. This breakthrough is enabled by an excitation-memory effect during pulsed operations, whereby the device ‘remembers’ past input signals to emit light faster on subsequent excitation, bypassing delays caused by slow charge transport.
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This is a summary of: Lu, X. et al. Accelerated response speed of quantum-dot light-emitting diodes by hole-trap-induced excitation memory. Nat. Electron. https://doi.org/10.1038/s41928-025-01350-0 (2025).
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Fast-response electroluminescence from quantum-dot light-emitting diodes. Nat Electron 8, 296–297 (2025). https://doi.org/10.1038/s41928-025-01366-6
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DOI: https://doi.org/10.1038/s41928-025-01366-6
