Fig. 1: Schematics of a SLCFET along with its transfer characteristics.
a, Schematics of a portion of a SLCFET having multiple (1,000s) of fins along with the cross-section of a single fin with its multiple conducting channels. b–d, Transfer characteristics and transconductance at VDS = 0.1 V and ΔVGS = 50 mV plotted in linear scale (b), here Ptop, Pbottom and Psandwiched represent the gm peaks originating from the topmost channel, bottommost channel and the channels in bewteen the two channels, respectively, and in log scale (c), and a zoomed-in portion of c between −10 V < VGS < −8 V at VDS = 0.1 V (d). Normalization was performed by dividing the measured current by device source width. Inset in b: ID–VDS characteristic at high drain bias. Inset in c: the cross-section of a fin. The relative locations of top channel, bottom channel and the sandwiched channels are indicated by the arrows.
