Fig. 3: Current–voltage and simultaneous electroluminescense measurements at VDS = 14 V, ΔVGS = 100 mV and exposure time = 30 s. | Nature Electronics

Fig. 3: Current–voltage and simultaneous electroluminescense measurements at VDS = 14 V, ΔVGS = 100 mV and exposure time = 30 s.

From: Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications

Fig. 3

a, ID–VG and IG–VGS as VGS is swept from −12 V to −10.5 V during the latching process. A 30-s step time ensured sufficient exposure for the microscope camera and resulted in sufficiently high signal-to-noise ratio to avoid weak localized emission being corrupted by the system noise. The current compliance of 1 mA prevented degradation of the device during the long step time. b, Summed EL as a function of VGS. Inset: EL micrograph at VGS = −11.4 V. c–g, EL micrograph as a function of VGS sweep for VGS = −11.3 V (c), VGS = −11.2 V (d), VGS = −11.1 V (e), VGS = −11.0 V (f) and VGS = −10.7 V (g). The measurements were performed with a lens of numerical aperture = 0.6. The measurements of the EL spectrum in ref. 9. showed a minimum wavelength of approximately 500 nm. Consequently, the optical resolution of this measurement was around 500 nm (0.6 × wavelength/numerical aperture).

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