Extended Data Table 1 Comparison of THz frequency multipliers devices

From: A terahertz nonlinear diode chain based on an asymmetric double-layer topology

Ref.

Multiplying Factor

Anode Number

Frequency

Input

Output

Conversion

Structure

\

\

\

Band

Power

Power

Efficiency

\

   

(GHz)

(mW)

(mW)

Max.\

 

*GaN SBD-based frequency multipliers

52,53

×3

4

99~111

220

2.1

1%

Single waveguide

54

×2

8

111~125

286

48.5

17%

Single waveguide

55

×3

8

200~220

900

17.5

1.93%

Single waveguide

56

×3

8

205~230

~400

18.4

4.70%

Single waveguide

*GaAs SBD-based frequency multipliers

57

×2

6

135~160

600

200

30%

Single waveguide

155~185

46

×2

6

135~160

1000

250

25%

Single waveguide

58

×2

6

170~200

500

125

25%

Single waveguide

59

×2

6

184~212

180

54

30%

Single waveguide

28

×2

6*2

180~190

800

200

25%

Power combined

25

×2

4*2

180

500

130

26%

Power combined

7

×2

6*4

170~185

1500

350

23%

Power combined

33

×3

6*2

105~120

800-900

160-180

20%

Power combined

*

×2

32

155~177

904

305

38%

Single waveguide

#

×2

16

162~172

~660

230

32%

Single waveguide

  1. The technical specifications for THz frequency multipliers7,25,28,33,35,54,55,56,57,58. THz frequency multipliers often utilize two semiconductor materials, GaN and GaAs. However, the less heat-resistant GaN material is typically operated at very low duty cycles to achieve greater pulse power capacity. Nevertheless, for practical applications, continuous wave (CW) THz takes precedence, and power combining techniques can further extend the power capacity. However, for practical applications, CW THz is dominant, and power combining techniques can further extend the power capacity. Taking the WR-5.1 waveguide standard as an example, our devices are shown as # for the single-layer microstructures diode frequency multiplier structure, and * for the double-layer microstructures diode frequency multiplier structure.
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