A direct bonding–debonding method has been developed to fabricate stacked two-dimensional semiconductors at the wafer scale with engineered layer numbers and interlayer twist angles. The as-produced structures feature pristine surfaces and interfaces, and wafer-scale uniformity — all of which are essential for application in next-generation electronic devices.
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References
Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021). A review article that sets out the promise and current status of 2D transistors.
Wang, Q. et al. Layer-by-layer epitaxy of multi-layer MoS2 wafers. Natl Sci. Rev. 9, nwac077 (2022). This paper reports the growth of multilayer MoS2 4-inch wafers using chemical vapour deposition.
Kim, J.-Y., Ju, X., Ang, K.-W. & Chi, D. Van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: review and outlook. ACS Nano 17, 1831–1844 (2023). A review article that presents the pros and cons of transfer methods for 2D materials.
Nguyen, V. L. et al. Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography. Nat. Electron. 6, 146–153 (2023). This paper presents an experimental study of the adhesion energy between MoS2 and various substrates.
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This is a summary of: Liu, J. et al. Direct bonding and debonding of two-dimensional semiconductors. Nat. Electron. https://doi.org/10.1038/s41928-025-01474-3 (2025).
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Stacked two-dimensional semiconductors from a direct bonding–debonding process. Nat Electron 8, 1010–1011 (2025). https://doi.org/10.1038/s41928-025-01507-x
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DOI: https://doi.org/10.1038/s41928-025-01507-x
