Fig. 3: Charge carrier mobility of Ph-BTBT-C₁₀ bilayers.

a, Gate-voltage-dependent Hofstein mobility μ^Hofs._4p at various temperatures. Some of the data points near the threshold voltage are shaded to indicate that the mobility extraction method ceases to be valid close to the threshold. b, Temperature dependence of Hall mobility μ_Hall. The top inset displays the optical image of the Hall device. The bottom inset shows the Hall resistance R_xy of Ph-BTBT-C₁₀ at various temperatures (points) and linear fitting (lines) at gate voltage V_G of −110 V. The dielectric is 200-nm-thick SiO₂. The Hall coefficient R_H was the slope of the R_xy−B curve (B is the magnetic field), and the longitudinal conductance was calculated using the four-point-probe voltage drop recorded simultaneously. The error bars in μ_Hall originate from the uncertainty in R_xy from fitting and represent one standard deviation. c, Summary of the carrier mobilities in high-mobility single-crystal organic semiconductors and MoS₂ with a band-like signature. The shaded regions are separated by a carrier mobility of 50 cm² V⁻¹ s⁻¹. d, Temperature-dependent μ^Hofs._4p at various n_c values. The dashed line represents the power-law dependence of μ ∝ T^−γ (γ is the power-law exponent), and the inset shows γ fitted in regimes (i) and (ii). The error bars in γ originate from the power-law-fitting uncertainty and represent one standard deviation. The blue-, green- and red-shaded regions represent temperature ranges of ~8–40 K, ~40–100 K and ~100–280 K, respectively.