Table 1 Values were used as given in this table, unless stated otherwise.
From: Memory consolidation and improvement by synaptic tagging and capture in recurrent neural networks
Parameters for neuron and static network dynamics | |||
|---|---|---|---|
Symbol | Value | Description | Refs. |
Δt | 0.2 ms | Duration of one time step for numerical computation | |
τmem | 10 ms | Membrane time constant | |
τsyn | 5 ms | Synaptic time constant, also for external background current | |
tax,delay | 3 ms | Axonal spike delay | |
tref | 2 ms | Duration of the refractory period | |
R | 10 MΩ | Membrane resistance | |
Vrev | −65 mV | Reversal (equilibrium) potential | |
Vreset | −70 mV | Reset potential | |
Vth | −55 mV | Threshold potential to be crossed for spiking | |
σwn | 0.05 nA s1/2 | Standard deviation for Gaussian noise in external background current | |
I0 | 0.15 nA | Mean of the external background current | |
Ne | 1600 | Number of neurons in the excitatory population | |
Ni | 400 | Number of neurons in the inhibitory population | |
pc | 0.1 | Probability of a connection existing between two neurons | |
h0 | 0.420075 nC | Initial excitatory → excitatory coupling strength | |
wei | 2h0 | Excitatory → inhibitory coupling strength | |
\({w}_{{\rm{stim}}}\) | h0 | Coupling strength of synapses from putative input neurons | |
\({N}_{{\rm{stim}}}\) | 25 | Number of putative input neurons for stimulation | |
\({f}_{{\rm{stim}}}\) | 100 Hz | Frequency of learning/recall stimulation from putative input neurons | |
r | 0.5 | Fraction of assembly neurons that are stimulated to trigger recall | |
