Fig. 2: Effect of V/III ratio on nucleation of InSb on InP.
From: In-plane selective area InSb–Al nanowire quantum networks
a The average number of nucleation points n per micrometer trench length as a function of the V/III ratio during the growth for different crystal directions of the mask openings ([110] and [112]). The datapoint averages are gathered by analyzing 500 µm length of mask opening (ten lines, each 50 µm long) and error bars represent the standard deviation. Varying the TMSb (TMIn) flow with constant TMIn (TMSb) flow leads to the same value for n as a function of V/III, showing that the total flow does not influence the nucleation of the InSb on the InP. At a ratio of 40,000, the nucleation of InSb is completely inhibited by Sb adatoms on the InP surface. Inset: logarithmic plot of the data up to a V/III ratio of 20,000. b, c Top-view SEM image showing the different morphologies of, and distance between, InSb islands for low b and high c V/III ratios. Scale bar in b, c is 200 nm.
