Fig. 3: High-resolution scanning tunneling microscope (STM) topography images of the hydrogen-lithography patterns.
From: Atomic-scale control of tunneling in donor-based devices
a Wire, named Wire-A; b–i single electron transistor (SET) devices, named SET-B to SET-I, corresponding to the panel labels. The drain/source electrodes are oriented in the [110] lattice direction for all cases except for SET-G and SET-I whose drain/source electrodes are oriented in the [100] lattice direction (\(45^ \circ\) to the [110] direction). Different STM tips/tip conditions are used for the STM images under imaging conditions: −2 V sample bias and 0.1 or 0.05 nA setpoint current.
