Fig. 3: Gate tunable negative magnetoresistance.

Magnetoresistance \(\Delta \rho /\rho _0\) measured with both magnetic field B and current I aligned to a axis, \(B\parallel I\parallel a\) (flake t = 16.9 nm). Inset: The extracted chiral anomaly coefficient C_w at varied gate voltages. The error bars are the standard deviation.