Fig. 3: Gate-controlled switching of spin-galvanic signal in graphene-MoTe₂ heterostructure at room temperature.

a Measured spin-galvanic signal (V_SGE) by sweeping a magnetic field along the x-axis (B_x) at room temperature in graphene-MoTe₂ heterostructure (Dev 1) with I = 80 µA and applied gate voltages of V_g = 20 V and −10V to position the Fermi level (E_f) in the electron and hole doping regimes, respectively. A linear background is subtracted from the data (see Supplementary Fig. S9). b Measured non-local signals (V_nl) in pristine graphene Hall cross by sweeping a magnetic field in the x-direction (B_x) for electron- and hole-doped regions with I = 100 µA, V_g = 70 V and −50 V, respectively. c The low energy band structure of graphene in proximitized to MoTe₂ from density functional theory calculations. The color is the expected value of the spins polarized along with the z-direction (s_z). d, e Density functional theory calculations for similar clockwise spin texture in the outermost conduction (\(\epsilon _1^{{\mathrm{CB}}}\)) and valence band (\(\epsilon _2^{{\mathrm{VB}}}\)) in graphene-MoTe₂ heterostructure.