Fig. 4: Gate dependence of spin-galvanic signal in graphene-MoTe2 heterostructure at room temperature.
a Evolution of measured spin-galvanic signal (VSGE) by sweeping magnetic field along the x-axis (Bx) at different gate voltages in the range of +40 to −40 V, with I = ±80 µA in Dev 1 at room temperature. The sign of the spin-galvanic signal changes with gate voltage Vg and spin injection bias current I. b Gate dependence of graphene channel resistance (RGr) and spin-galvanic signals (∆VSGE and ∆RSGE = ∆VSGE/I) at I = ±80 µA at room temperature. The sign change of the spin-galvanic signal is observed close to the charge neutrality point of graphene and the signals are of opposite sign for n and p-type regimes of the graphene-MoTe2 heterostructure. The error bars are calculated from the noise level of the manifested signals and not clearly visible because error bars are smaller than the data points.
