Fig. 3: Simulation results showing the Si1−xGex composition profiles along different directions on various surfaces, and dispersion of the composition for scan speeds in the range of 1–500 mm s−1.
Inset figures show the surface and direction (dotted lines) where the composition profile was taken. Ge molar fraction x(r) along the a longitudinal and b transverse directions on the top surface, and c along the vertical direction at the cross-sections of laser-written SiGe microstripes. d Normalized volume histogram showing the scan-speed-dependent dispersion of the initial composition x0 = 0.5 within the whole solidified volume in terms of the Ge molar fraction. The bin size for histograms is ∆x = 0.01. Inset figure shows the laser-processed volume in the steady-state region, where the histograms were calculated.
