Fig. 4: Elemental analysis of an in-plane longitudinal SiGe heterostructure laser-written at a scan speed of 200 mm s−1. | Communications Physics

Fig. 4: Elemental analysis of an in-plane longitudinal SiGe heterostructure laser-written at a scan speed of 200 mm s−1.

From: Non-isothermal phase-field simulations of laser-written in-plane SiGe heterostructures for photonic applications

Fig. 4

a High-angle annular dark-field image (HAADF) showing the material contrast at the cross-section of the laser-processed region. b Energy-dispersive X-ray spectroscopy (EDX) and c phase-field simulation results showing spatial redistribution of the alloy composition at the cross-section for 2D comparison. The color scale applies to both figures in b, c. d Quantitative comparison between the experimental (blue solid line) and simulated (red dashed line) Ge concentration along the depth profile across the cross-section, as marked by a white arrow in a. The experimental error margin in the EDX data is 5%.

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