Fig. 5: Laser-written in-plane longitudinal SiGe heterostructures as graded-index optical waveguides.

a Simulated spatial redistribution of Ge molar fraction x(r) and b calculated refractive index n(x) of the cross-section of a SiGe heterostructure laser-written at a scan speed of 200 mm s−1. Simulated c transverse electric (TE) and d transverse magnetic (TM) polarized mode profiles obtained by modal analysis using the refractive index profile n(r) in b. Infrared (IR) camera image showing the experimentally captured intensity profiles for the e TE and f TM polarized modes of light, which was free space coupled into the 1 cm long laser-written SiGe waveguides using a fiber laser emitting at 2 µm.