Fig. 7: Laser-written in-plane transverse SiGe superlattice on a silicon substrate as a waveguide Bragg grating. | Communications Physics

Fig. 7: Laser-written in-plane transverse SiGe superlattice on a silicon substrate as a waveguide Bragg grating.

From: Non-isothermal phase-field simulations of laser-written in-plane SiGe heterostructures for photonic applications

Fig. 7

a Composition color map shows the periodic Ge molar fraction x on the top surface of an in-plane transverse SiGe superlattice written at a constant stage scan speed of 25 mm s−1, using a sawtooth wave modulation of the laser beam position (back and forth movement of 200 nm) in the scan direction. Calculated optical intensity profile of a transverse electric (TE) polarized mode is shown as superimposed on the output facet of the simulated waveguide Bragg grating. b Ge molar fraction profile as a function of position along the center line on the top surface showing a 10-period grating with a period of 285 nm. c Calculated transmission and reflection spectra of the 10-period SiGe waveguide Bragg grating by using finite-element-method (FEM)-based optical simulations. The reflection data (red bottom line) is magnified ten times for clarity.

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