Fig. 1: Resistivity saturation in Ce3Bi4Pt3.
Below an inflection temperature T* (indicated by small arrows), experimental resistivities ρ(T)5,6,7 deviate from activation-like behavior (T > T*) and enter a regime of resistivity saturation (T < T*). Pressure and disorder affect the resistivity differently: under pressure (black and shades of red; from Cooley et al.5) the crossover temperature T* (labeled with colored triangles and reported in the inset) grows significantly and the saturation value ρ(T → 0) decreases. Radiation-induced disorder (black and blue to green; from Wakeham et al.6) only suppresses ρ(T → 0), while T* (labeled with colored circles and reported in the inset) remains constant. Also shown are results at ambient pressure from Katoh et al.57 (dashed black line). Differences between black curves (solid and dashed) demonstrate a strong sample dependence. Inset: dependence of T* on pressure (upper x axis; red-shaded triangles5, gray diamonds from Campbell et al.7) and disorder (measured in displacements per atom (DPA); lower x axis; blue to green open circles6).
