Fig. 2: Simulated resistivity of Ce₃Bi₄Pt₃.

Shown are results for the resistivity ρ(T) a at ambient pressure (P = 0) for varying impurity scattering Γ_imp (shades blue to green) and b at different pressures P (shades of red) for fixed impurity scattering Γ_imp = 5 meV. Filled circles in ρ(T) indicate simulation temperatures; results shown by open circles have been obtained by extrapolating the many-body scattering rate Γ(T) with a quadratic fit. Vertical arrows indicate inflection points T* in ρ(T). The simulations mirror the experimental trends: T* varies significantly with pressure, but depends only weakly on disorder. While transport simulations include the full self-energy Σ(ω), it is instructive to quantify electron-electron scattering: we display the square root of \({{\Gamma }}=-{\left\langle {{{{{{{\rm{Im}}}}}}}}{{\Sigma }}(\omega = 0)\right\rangle }_{J = 5/2}\), the simulated many-body scattering rate at the Fermi level (averaged over Ce-4fJ = 5/2 components); black and red-shaded lines are linear fits to Γ^1/2 of simulated points, suggesting that for all pressures: Γ = γT²; γ decreases notably under compression, indicative of weakening correlation effects. Horizontal lines (shades of blue and green in a; dotted line in b) indicate the additional impurity-scattering rate Γ_imp. The total rate is the sum: Γ_total = Γ + Γ_imp.