Fig. 2: Electronic properties at the zigzag (ZZ) edges in monolayer (ML) NbSe2. | Communications Physics

Fig. 2: Electronic properties at the zigzag (ZZ) edges in monolayer (ML) NbSe2.

From: Visualization of edge-modulated charge-density-wave orders in monolayer transition-metal-dichalcogenide metal

Fig. 2

a,b Representative scanning tunneling microscopy (STM) images of ML NbSe2 islands with ZZ edges. The island edges are marked by the dashed lines. c, d Corresponding scanning tunneling spectroscopy (STS) maps recorded at the same locations of panel a,b under the energy of 0 eV, respectively. e–g Spatially resolved STS spectra recorded across the ZZ edges that marked by the green arrows in panels a, b, respectively. The locations of the edges are highlighted by the black dashed lines. h–j Low-energy STS spectra at the edges and the bulk of ML NbSe2 that are extracted from panels e–g, respectively. The edge states are highlighted by the shadows.

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